原文链接：https://www.cnblogs.com/lelin/p/11409976.html大概在遥远的90nm之前，leakage power在library里确实是被描述成一个常值的。但从90nm开始，为了更加精确，library里的leakage power不再是个常值了，而是被模拟成一个输入状态的函数。所以基础还是library，在一个library里跟leakage相关的变量大致

svt_axi_slave_agent中封装了：svt_axi_slave_sequencer sequencersvt_mem axi-slave_memsvt_axi_slave driversvt_axi_slave_vif vifsvt_axi_slave_monitor monitor…在monitor中定义了一个TLM端口：uvm_blocking_peek_imp#(`SVT_AXI

Coverage Options In Compile/Simulation原文链接：https://www.daimajiaoliu.com/daima/6cb70fd1091e803

原文链接：https://www.planetanalog.com/using-deep-n-wells-in-analog-design/On a conventional CMOS process (see figure 1), NMOS devices are formed in a P well or substrate connected to ground (or the most n